Indium-hydrogen complexes in silicon and germanium under compression and tension
Identifieur interne : 000044 ( Main/Exploration ); précédent : 000043; suivant : 000045Indium-hydrogen complexes in silicon and germanium under compression and tension
Auteurs : RBID : ISTEX:10751_1996_Article_BF02150177.pdfAbstract
The response of hydrogen-acceptor complexes in silicon and germanium to the application of uniaxial mechanical stress was studied by means of the perturbed angular correlation technique. This hyperfine interaction technique is sensitive to the microscopic structure of the immediate lattice environment of the probe atom. For the measurements, the probe111In was introduced into Si and Ge crystals by ion implantation at room temperature. After annealing, the radioactive probe atom111In acts as an acceptor in the elemental semiconductors Si and Ge and as such can easily be passivated by hydrogen indiffusion. The resulting In-H complex was subsequently exposed to uniaxial compressive and tensile stress, which was produced by bending the crystals along the three major lattice directions 〈100〉, 〈110〉 and 〈111〉. It was found that the application of uniaxial mechanical stress causes no change in the population of the four equivalent bond centred H sites surrounding the In acceptor. Evidence was found for a large mismatch of the lattice parameters between the passivated In implanted layer and the surrounding pure Si.
DOI: 10.1007/BF02150177
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Indium-hydrogen complexes in silicon and germanium under compression and tension</title><author><name>G. Marx</name><affiliation wicri:level="3"><mods:affiliation>Institut für Strahlen- und Kernphysik, Universität Bonn, D-53115, Bonn, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Strahlen- und Kernphysik, Universität Bonn, D-53115, Bonn</wicri:regionArea><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Bonn</settlement></placeName></affiliation></author><author><name>R. Vianden</name><affiliation wicri:level="3"><mods:affiliation>Institut für Strahlen- und Kernphysik, Universität Bonn, D-53115, Bonn, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Strahlen- und Kernphysik, Universität Bonn, D-53115, Bonn</wicri:regionArea><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Bonn</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10751_1996_Article_BF02150177.pdf</idno><date when="1996">1996</date><idno type="doi">10.1007/BF02150177</idno><idno type="wicri:Area/Main/Corpus">000741</idno><idno type="wicri:Area/Main/Curation">000741</idno><idno type="wicri:Area/Main/Exploration">000044</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The response of hydrogen-acceptor complexes in silicon and germanium to the application of uniaxial mechanical stress was studied by means of the perturbed angular correlation technique. This hyperfine interaction technique is sensitive to the microscopic structure of the immediate lattice environment of the probe atom. For the measurements, the probe111In was introduced into Si and Ge crystals by ion implantation at room temperature. After annealing, the radioactive probe atom111In acts as an acceptor in the elemental semiconductors Si and Ge and as such can easily be passivated by hydrogen indiffusion. The resulting In-H complex was subsequently exposed to uniaxial compressive and tensile stress, which was produced by bending the crystals along the three major lattice directions 〈100〉, 〈110〉 and 〈111〉. It was found that the application of uniaxial mechanical stress causes no change in the population of the four equivalent bond centred H sites surrounding the In acceptor. Evidence was found for a large mismatch of the lattice parameters between the passivated In implanted layer and the surrounding pure Si.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="7eebb0a5c239375e80bd07e7ad04b2449d7f8b37"><titleInfo lang="eng"><title>Indium-hydrogen complexes in silicon and germanium under compression and tension</title></titleInfo><name type="personal"><namePart type="given">G.</namePart><namePart type="family">Marx</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Strahlen- und Kernphysik, Universität Bonn, D-53115, Bonn, Germany</affiliation></name><name type="personal"><namePart type="given">R.</namePart><namePart type="family">Vianden</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Strahlen- und Kernphysik, Universität Bonn, D-53115, Bonn, Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Baltzer Science Publishers, Baarn/Kluwer Academic Publishers, Dordrecht</publisher><dateValid encoding="w3cdtf">2005-08-24</dateValid><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The response of hydrogen-acceptor complexes in silicon and germanium to the application of uniaxial mechanical stress was studied by means of the perturbed angular correlation technique. This hyperfine interaction technique is sensitive to the microscopic structure of the immediate lattice environment of the probe atom. For the measurements, the probe111In was introduced into Si and Ge crystals by ion implantation at room temperature. After annealing, the radioactive probe atom111In acts as an acceptor in the elemental semiconductors Si and Ge and as such can easily be passivated by hydrogen indiffusion. The resulting In-H complex was subsequently exposed to uniaxial compressive and tensile stress, which was produced by bending the crystals along the three major lattice directions 〈100〉, 〈110〉 and 〈111〉. It was found that the application of uniaxial mechanical stress causes no change in the population of the four equivalent bond centred H sites surrounding the In acceptor. Evidence was found for a large mismatch of the lattice parameters between the passivated In implanted layer and the surrounding pure Si.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>Hyperfine Interact</title></titleInfo><titleInfo><title>Hyperfine Interactions</title><partNumber>Year: 1996</partNumber><partNumber>Volume: 97-98</partNumber><partNumber>Number: 1</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1996-12-01</dateIssued><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Nuclear Physics, Heavy Ions, Hadrons</topic><topic>Atoms, Molecules, Clusters and Plasmas</topic><topic>Condensed Matter</topic><topic>Surfaces and Interfaces, Thin Films</topic></subject><identifier type="issn">0304-3843</identifier><identifier type="issn">Electronic: 1572-9540</identifier><identifier type="matrixNumber">10751</identifier><identifier type="local">IssueArticleCount: 38</identifier><recordInfo><recordOrigin>J. C. Baltzer AG, Science Publishers, 1996</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02150177</identifier><identifier type="matrixNumber">Art15</identifier><identifier type="local">BF02150177</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>211</start><end>219</end></extent></part><recordInfo><recordOrigin>J.C. Baltzer AG, Science Publishers, 1996</recordOrigin><recordIdentifier>10751_1996_Article_BF02150177.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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